SCOPUS 정보 검색 플랫폼

Nitride Semiconductor Devices: Principles and Simulation

Volumn , Issue , 2007, Pages 253-277

Intersubband Electroabsorption Modulator

b ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

Absorption saturation; Chirp parameter; Current; Electrical properties; Electroabsorption; Figure of merit; Intersubband Electroabsorption modulator; Model; Modulator structure; Nitride semiconductor devices; Thermal properties

Indexed keywords

EID: 84882900062 PISSN: None EISSN: None Source Type: Book
DOI: 10.1002/9783527610723.ch12 Document Type: Chapter

Times cited : (3)

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