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Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 285-289

Electrical and optical investigation of MBE grown Si-doped AlxGa1-xN as a function of Al mole fraction up to 0.5

(5) Ahoujja, M a McFall, J L b Yeo, Y K c Hengehold, R L c Van Nostrand, J E b

a UNIVERSITY OF DAYTON (United States)

b AIR FORCE RESEARCH LABORATORY (United States)

c AIR FORCE INSTITUTE OF TECHNOLOGY (United States)

Author keywords

Cathodoluminescence; Doping effects; Gallium nitride; Hall effect; Molecular beam epitaxy; Nitrides; Optical properties

Indexed keywords

ACTIVATION ENERGY; CATHODOLUMINESCENCE; ENERGY GAP; EXCITONS; HALL EFFECT; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES;

MOLE FRACTION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0037197419 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)01031-5 Document Type: Conference Paper

Times cited : (13)

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