MBE growth of nitride-based photovoltaic intersubband detectors

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 418-425

  Monroy, E ^a   Guillot, F ^a   Leconte, S ^a   Bellet Amalric, E ^a   Baumann, E ^b   Giorgetta, F ^b   Hofstetter, D ^b   Nevou, L ^c   Tchernycheva, M ^c   Doyennette, L ^c   Julien, F H ^c   Remmele, T ^d   Albrecht, M ^d  

^a UNIV GRENOBLE ALPES   (France)

^b UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^c UNIVERSITÉ PARIS SACLAY   (France)

^d LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

GaN; Intersubband; Molecular beam epitaxy; QWIP; Superlattices

Indexed keywords

CLADDING (COATING); EPITAXIAL GROWTH; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES;

GAN; GROWTH INTERRUPTIONS; INTERSUBBAND; QUANTUM WELL INFRARED PHOTODETECTORS (QWIP);

METAL DETECTORS;

EID: 33845231950     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.09.025     Document Type: Article

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