Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epitaxy

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 79-82

  Liu, X Y ^a   Janes P ^b   Holmstrom P ^b   Aggerstam, T ^b   Lourdudoss, S ^b   Thylen L ^b   Andersson, T G ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

Author keywords

A1. Atomic force microscopy; A1. High resolution X ray diffraction; A1. Reflection high energy electron diffraction; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

ABSORPTION SPECTROSCOPY; ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PLASMAS; SEMICONDUCTING SILICON; X RAY DIFFRACTION;

HIGH-RESOLUTION X-RAY DIFFRACTION; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; SAPPHIRE SUBSTRATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33847321030     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.241     Document Type: Article

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