GaN/AIN multiple quantum well structures grown by MBE on GaN templates for 1.55 μm intersubband absorption

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6479, Issue , 2007, Pages

  Aggerstam, T ^a   Andersson, M G ^b   Holmstrom P ^a   Janes P ^a   Liu, X Y ^b   Lourdudoss, S ^a   Thylen L ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

AlN; GaN; Intersubband; MBE; Multiple quantum well; Template

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; ELECTROABSORPTION MODULATORS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

DOPED STRUCTURES; INTERSUBBAND ABSORPTION; MULTIPLE QUANTUM WELL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34248634306     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.695457     Document Type: Conference Paper

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