The charge trapping effect of metal-ferroelectric (PbZr 0.53Ti 0.47O 3)-insulator (HfO 2)-silicon capacitors

Journal of Applied Physics

Volumn 98, Issue 4, 2005, Pages

  Juan, Pi Chun ^a   Hu, Yu Ping ^a   Chiu, Fu Chien ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING EFFECT; FLATBAND VOLTAGE; METAL FERROELECTRIC INSULATOR SEMICONDUCTOR (MFIS) CAPACITORS; VOLTAGE STRESS;

CAPACITANCE; CURRENT DENSITY; ELECTRIC INSULATORS; ELECTRON TRAPS; HAFNIUM COMPOUNDS; VOLTAGE MEASUREMENT;

FERROELECTRIC MATERIALS;

EID: 25144446735     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2014935     Document Type: Article

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