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Volumn 75, Issue 5, 1999, Pages 722-724
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Metal/ferroelectric/insulator/semiconductor structure of Pt/Sr Bi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer
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Author keywords
[No Author keywords available]
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Indexed keywords
FERROELECTRIC MATERIALS;
INTERDIFFUSION (SOLIDS);
LASER ABLATION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PULSED LASER APPLICATIONS;
RANDOM ACCESS STORAGE;
RAPID THERMAL ANNEALING;
SEMICONDUCTOR DEVICE STRUCTURES;
STRONTIUM COMPOUNDS;
SUBSTRATES;
THERMODYNAMIC STABILITY;
YTTRIUM COMPOUNDS;
METAL/FERROELECTRIC/INSULATOR/SEMICONDUCTOR (MFIS) STRUCTURES;
NONDESTRUCTIVE READ-OUT (NDRO);
FIELD EFFECT TRANSISTORS;
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EID: 0032606520
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.124255 Document Type: Article |
Times cited : (49)
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References (11)
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