Basic characteristics of metal-ferroelectric-insulator-semiconductor structure using a high-k PrOx insulator layer

Journal of Applied Physics

Volumn 93, Issue 7, 2003, Pages 4137-4143

  Noda, Minoru ^a   Kodama, Kazushi ^a   Kitai, Satoshi ^a   Takahashi, Mitsue ^a   Kanashima, Takeshi ^a   Okuyama, Masanori ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL STRUCTURE; CURRENT DENSITY; FERROELECTRIC MATERIALS; FILM GROWTH; HIGH TEMPERATURE EFFECTS; METALLIC FILMS; MISFET DEVICES; PERMITTIVITY; SURFACE ROUGHNESS;

INSULATOR LAYERS;

METAL INSULATOR BOUNDARIES;

EID: 0037392782     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1558206     Document Type: Article

References (25)

1. J. L. Moll and Y. Tarui, IEEE Trans. Electron Devices ED-10, 338 (1963).
2. Y. Matsui, M. Okuyama, M. Noda, and Y. Hamakawa, Appl. Phys. A: Mater. Sci. Process. 28, 161 (1982).
3. T. Hirai, T. Goto, K. Teramoto, T. Nishi, and Y. Tarui, Jpn. J. Appl. Phys. 33, 5219 (1994).
4. E. Tokumitsu, G. Fujii, and H. Ishiwara, Appl. Phys. Lett. 75, 575 (1999).
5. Y. Fujisaki, T. Kijima, and H. Ishiwara, Appl. Phys. Lett. 78, 1285 (2000).
6. S. Migita, K. Sakamaki, H. Ota, S. B. Xio, Y. Tarui, and S. Sakai, Integr. Ferroelectr. 40, 135 (2001).
7. M. Okuyama, H. Sugiyama, T. Nakaiso, and M. Noda, Integr. Ferroelectr. 34, 37 (2001).
8. H. Ishiwara, in Extended Abstracts of the International Conference of the SSDM, 1998, p. 222.
9. K. Kodama, M. Takahashi, D. Ricinschi, A. I. Lerescu, M. Noda, and M. Okuyama, Jpn. J. Appl. Phys. 41, 2639 (2002).
10. Y. H. Wu, M. Y. Yang, A. Chin, W. J. Chen, and C. M. Kwei, IEEE Electron Device Lett. 21, 341 (2000).
11. S. Guha, E. Cartier, M. Gribelyuk, N. A. Bojarczuk, and M. C. Copel, Appl. Phys. Lett. 77, 2710 (2000).
12. A. Chin, high-k Gate Dielectrics, in Extended Abstracts of MRS Workshop, New Orleans, 2000, p. 13.
13. J. P. Maria and A. I. Kingon, Appl. Phys. Lett. 79, 102 (2001).
14. L. Manchanda, M. Green, R. V. Dover, M. Morris, A. Kerber, Y. Hu, J. -P. Han, P. Silverman, T. Sorsch, and G. Weber, Tech. Dig. - Int. Electron Devices Meet. 23 (2000).
15. W. Qi, R. Nieh, E. Dharmarajan, B. H. Lee, Y. Jeon, L. Rang, K. Onishi, and J. C. Lee, Appl. Phys. Lett. 77, 1704 (2000).
16. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000).
17. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 74, 2854 (1999).
18. Y. Fujimori, N. Izumi, T. Nakamura, A. Kamisawa, and Y. Shigematsu, Jpn. J. Appl. Phys., Part 1 36, 5935 (1997).
19. T. Nakaiso, M. Noda, and M. Okuyama, Jpn. J. Appl. Phys., Part 1 40, 2935 (2001).
20. T. Kijima and H. Matsunaga, Jpn. J. Appl. Phys., Part 1 38, 2281 (1999).
21. B. Park and H. Ishiwara, Appl. Phys. Lett. 79, 806 (2001).
22. S. Kitai, O. Maida, T. Kanashima, and M. Okuyama, Jpn. J. Appl. Phys. (in press).
23. H. J. Osten, J. P. Liu, P. Gaworzewski, E. Bugiel, and P. Zaumseil, Tech. Dig. - Int. Electron Devices Meet. 653 (2000).
24. M. Takahashi, H. Sugiyama, T. Nakaiso, K. Kodama, M. Noda, and M. Okuyama, Jpn. J. Appl. Phys. 40, 2923 (2001).
25. M. Okuyama, M. Takahashi, K. Kodama, T. Nakaiso, and M. Noda, Mater. Res. Soc. Symp. Proc. 655, CC13.10.1 (2001).