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Volumn 444, Issue 1-2, 2003, Pages 276-281
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Improvement of electrical properties of ferroelectric gate oxide structure by using Al2O3 thin films as buffer insulator
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Author keywords
Buffer layer; Ferroelectric; Memory window; Metal ferroelectric insulator semiconductor structure
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Indexed keywords
ALUMINA;
DIFFUSION;
ELECTRIC INSULATORS;
FERROELECTRIC MATERIALS;
MEMORY WINDOW;
THIN FILMS;
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EID: 0142043287
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(03)01099-X Document Type: Article |
Times cited : (20)
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References (15)
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