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Volumn 444, Issue 1-2, 2003, Pages 276-281

Improvement of electrical properties of ferroelectric gate oxide structure by using Al2O3 thin films as buffer insulator

Author keywords

Buffer layer; Ferroelectric; Memory window; Metal ferroelectric insulator semiconductor structure

Indexed keywords

ALUMINA; DIFFUSION; ELECTRIC INSULATORS; FERROELECTRIC MATERIALS;

EID: 0142043287     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01099-X     Document Type: Article
Times cited : (20)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.