Characterization of SrBi2Ta2O9 ferroelectric thin films deposited at low temperatures by plasma-enhanced metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 71, Issue 1, 1997, Pages 81-83

  Seong, Nak Jin ^a   Yoon, Soon Gil ^a   Lee, Seaunq Suk ^b  

^a Chungnam National University   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001904228     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119475     Document Type: Article

References (9)

1. K. Sugibuchi, Y. Kurogi, and N. Endo, J. Appl. Phys. 46, 2877 (1975).
2. H. Yoshimori, H. Watanabe, C. A. Paz de Araujo, L. D. Mcmillan, J. D. Cuchiaro, and M. C. Scott, U.S. Patent No. 9310021 (1993).
3. C. A. Paz de Araujo, L. D. Mcmillan, J. D. Cuchiaro, and M. C. Scott, International Patent Application WO93/12542 (1993).
4. T. Mihara, H. Watanabe, C. A. Paz de Araujo, L. D. Mcmillan, J. D. Cuchiaro, and M. C. Scott, in Proceedings of the Fourth International Symposium on Integrated Ferroelectric (University of Colorado, Boulder, 1992), p. 137.
5. K. Amanuma, T. Hase, and Y. Miyasaka, Appl. Phys. Lett. 66, 221 (1995).
6. M. Klee, paper presented at 7th International Symposium on Integrated Ferroelectrics held in Colorado Springs, CO, March 20-22, 1995.
7. R. Dat, J. K. Lee, O. Auciello, and A. I. Kingon, Appl. Phys. Lett. 67, 572 (1995).
8. T. Li, Y. Zhu, S. B. Desu, C. H. Peng, and M. Nagata, Appl. Phys. Lett. 68, 616 (1996).
9. T. Atsuki, N. Soyama, T. Yonezawa, and K. Ogi, Jpn. J. Appl. Phys. 1 34, 5096 (1995).