Characterization of Pt/SrBi2Ta2O9/Hf-Al-O/ Si field-effect transistors at elevated temperatures

Applied Physics Letters

Volumn 89, Issue 22, 2006, Pages

  Li, Qiu Hong ^a   Sakai, Shigeki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; STATISTICAL METHODS; THERMAL EFFECTS; THRESHOLD VOLTAGE;

DRAIN CURRENTS; FERROELECTRIC NONVOLATILE;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 33751582557     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2399351     Document Type: Article

References (18)

1. T. P. Ma and J.-P. Han, IEEE Electron Device Lett. 23, 386 (2002).
2. S. Sakai and R. Ilangovan, IEEE Electron Device Lett. 25, 369 (2004).
3. S. Sakai, R. Ilangovan, and M. Takahashi, Jpn. J. Appl. Phys., Part 1 43, 7876 (2004).
4. M. Takahashi and S. Sakai, Jpn. J. Appl. Phys., Part 2 44, L800 (2005).
5. K. Takahashi, K. Aizawa, B. E. Park, and H. Ishiwara, Jpn. J. Appl. Phys., Part 1 44, 6218 (2005).
6. I. Stolichnov, A. K. Tagantsev, E. Colla, N. Setter, and J. S. Cross, J. Appl. Phys. 98, 084106 (2005).
7. C.-H. Yang, S.-S. Park, and S.-G. Yoon, J. Electrochem. Soc. 145, 1330 (1998).
8. I. Schultz, H. Goebel, and M. Ullmann, Electron. Lett. 37, 1216 (2001).
9. A. Jiang, M. Dawber, J. F. Scott, C. Wang, P. Migliorato, and M. Gregg, Jpn. J. Appl. Phys., Part 1 42, 6973 (2003).
10. D. J. Taylor, R. E. Jones, P. Zurcher, P. Chu, Y. T. Lii, B. Jiang, and S. J. Gillespie, Appl. Phys. Lett. 68, 2300 (1996).
11. N. Inoue, T. Takeuchi, and Y. Hayashi, IEEE Trans. Electron Devices 49, 1572 (2002).
12. Y. Kumura, T. Ozaki, H. Kanaya, O. Hidaka, Y. Shimojo, S. Shuto, Y. Yamada, K. Tomioka, K. Yamakawa, S. Yamazaki, D. Takashima, T. Miyakawa, S. Shiratake, S. Ohtsuki, I. Kunishima, and A. Nitayama, Solid-State Electron. 50, 606 (2006).
13. K. Sugibuchi, Y. Kurogi, and N. Endo, J. Appl. Phys. 46, 2877 (1975).
14. S.-M. Koo, S. Khartsev, C.-M. Zetterling, A. Grishin, and M. Ostling, Appl. Phys. Lett. 83, 3975 (2003).
15. S. B. Xiong and S. Sakai, Appl. Phys. Lett. 75, 1613 (1999).
16. S. Sakai, M. Takahashi, and R. Ilangovan, Tech. Dig. - Int. Electron Devices Meet. 2004, 915.
17. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), 451.
18. R. Wang, J. Dunkley, T. A. Demassa, and L. F. Jelsma, IEEE Trans. Electron Devices ED-18, 386 (1971).