High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory

IEEE Electron Device Letters

Volumn 24, Issue 9, 2003, Pages 553-555

  Chien, Chao Hsin ^a   Wang, Ding Yeong ^b   Yang, Ming Jui ^a   Lehnen, Peer ^c   Leu, Ching Chich ^a   Chuang, Shiow Huey ^a   Huang, Tiao Yuan ^b   Chang, C Y ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NONE

Author keywords

Ferroelectric; Hafnium oxide; Memory window; Metal ferroelectric insulator semiconductor (MFIS); SrBi2Ta2O9

Indexed keywords

CRYSTALLIZATION; HAFNIUM COMPOUNDS; MOS CAPACITORS; NONDESTRUCTIVE READOUT; PEROVSKITE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; STRONTIUM COMPOUNDS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

FERROELECTRIC FILM; FERROELECTRIC MEMORY; HAFNIUM OXIDE; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR CAPACITOR; PEROVSKITE THIN FILM;

THIN FILMS;

EID: 0141674994     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.816582     Document Type: Letter

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