Advantages of RuOx bottom electrode in the dielectric and leakage characteristics of (Ba,Sr)TiO3 capacitor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 A, 1996, Pages 6153-6156

  Kim, Yong Tae ^a   Lee, Chang Woo ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Kookmin University   (South Korea)

Author keywords

(Ba,Sr)TiO3 capacitor; Bottom electrode; Interfacial reaction; Leakage current; Oxygen deficiency; RuOx

Indexed keywords

BOTTOM ELECTRODES; HILLOCK FORMATION; INTERFACIAL REACTIONS; RHENIUM OXIDES;

CAPACITORS; CRYSTAL ORIENTATION; CURRENT DENSITY; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRODES; FERROELECTRIC MATERIALS; FILM GROWTH; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; RUTHENIUM COMPOUNDS; THIN FILMS;

TITANIUM OXIDES;

EID: 0030382107     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.6153     Document Type: Article

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