Memory window of Pt/SrBi2Ta2O9/CeO2/SiO 2/Si structure for metal ferroelectric insulator semiconductor field effect transistor

Applied Physics Letters

Volumn 71, Issue 24, 1997, Pages 3507-3509

  Kim, Yong Tae ^a   Shin, Dong Suk ^a  

^a Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001354246     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120374     Document Type: Article

References (7)

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2. W. Kinney, Integr. Ferroelectr. 4, 131 (1994)
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4. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Ferroelectrics 11, 161 (1995).
5. Y. T. Kim and C. W. Lee, Jpn. J. Appl. Phys., Part 1 35, 6153 (1996).
6. T. Nakamura, Y. Nakao, A. Kamisawa, and H. Takasu, Appl. Phys. Lett. 65, 1522 (1994).
7. D. S. Shin, Y. H. Lee, and Y. T. Kim, Proceedings of 1997 Solid State Devices and Materials, 1997, p. 32.