Lead barium zirconate ferroelectric films with ZrO2 buffer layer for nonvolatile memory applications

Electrochemical and Solid-State Letters

Volumn 9, Issue 7, 2006, Pages

  Chen, Hung Yao ^a   Lin, Jen Po ^a   Wu, Jenn Ming ^a   Huang, Hsin Erh ^b   Bor, Hui Yun ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; LEAD; RANDOM ACCESS STORAGE; SILICON; SOL-GELS; SUBSTRATES; ZIRCONIA;

BUFFERED MFIS STRUCTURES; FERROELECTRIC PROPERTIES; MEMORY PROPERTY; MEMORY WINDOW;

THIN FILMS;

EID: 33646880069     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2197967     Document Type: Article

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