Physics-based 1/f noise model for MOSFETs with nitrided high-κ gate dielectrics

Solid-State Electronics

Volumn 52, Issue 5, 2008, Pages 711-724

  Morshed, Tanvir Hasan ^a   Devireddy, Siva Prasad ^a   Çelik Butler, Zeynep ^a   Shanware, Ajit ^b   Green, Keith ^b   Chambers, J J ^b   Visokay, M R ^b   Colombo, Luigi ^b  

^a University of Texas at Arlington   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

1 f noise; Gate stack; High dielectric; Interface traps; MOSFET; Unified Noise Model

Indexed keywords

GATE DIELECTRICS; NATURAL FREQUENCIES; NITRIDES; NOISE ABATEMENT;

INTERFACE TRAPS; UNIFIED NOISE MODELS;

MOSFET DEVICES;

EID: 41449109434     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.10.003     Document Type: Article

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