Effect of gate impurity concentration on inversion-layer mobility in MOSFETs with ultrathin gate oxide layer

IEEE Electron Device Letters

Volumn 24, Issue 5, 2003, Pages 354-356

  Koga, Junji ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Charge carrier mobility; Inversion layers; MOSFETs; Scattering; Silicon

Indexed keywords

CHARGE CARRIERS; COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC VARIABLES MEASUREMENT; ELECTRON MOBILITY; IMPURITIES; INTERFACES (MATERIALS); POLYSILICON; ULTRATHIN FILMS;

CAPACITANCE VOLTAGE MEASUREMENT; CHARGE CARRIER MOBILITY; GATE IMPURITY CONCENTRATION; INVERSION LAYER MOBILITY; ULTRATHIN GATE OXIDE LAYER;

MOSFET DEVICES;

EID: 0042173083     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.812551     Document Type: Article

References (14)

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