Impact of channel carrier displacement and barrier height lowering on the low-frequency noise characteristics of surface-channel n-MOSFETs

Solid-State Electronics

Volumn 49, Issue 4, 2005, Pages 654-662

  Ahsan, A K M ^a,b   Schroder, D K ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Barrier height lowering; Correlated noise model; Low frequency noise; MOSFET; Oxide trap density; Quantum effects; Scattering parameter; Silicon

Indexed keywords

APPROXIMATION THEORY; ATTENUATION; CAPACITANCE; CARRIER CONCENTRATION; CARRIER MOBILITY; CHARGE CARRIERS; CORRELATION METHODS; INTERFACES (MATERIALS); IONIZATION; QUANTUM THEORY; SILICON; SPURIOUS SIGNAL NOISE; VOLTAGE CONTROL;

BARRIER HEIGHT LOWERING; CORRELATED NOISE MODEL; LOW-FREQUENCY NOISE; OXIDE TRAP DENSITY; QUANTUM EFFECTS; SCATTERING PARAMETER;

MOSFET DEVICES;

EID: 13644267935     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.01.005     Document Type: Article

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