Weak temperature dependence of non-Coulomb scattering component of HfAlOx limited inversion layer mobility in n+-polysilicon/ HfAlOx/SiO2 n-channel metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 11, 2005, Pages 7750-7755

  Yasuda, Naoki ^a,c   Hisamatsu, Hirokazu ^d   Ota, Hiroyuki ^a   Mizubayashi, Wataru ^a   Tortumi, Akira ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c TOSHIBA CORPORATION   (Japan)

^d SEIKO EPSON CORPORATION   (Japan)

Author keywords

Halfnium aluminate; High k dielectric; Mobility; MOSFET; Phonon; Scattering; Temperature

Indexed keywords

DEGRADATION; DIELECTRIC MATERIALS; MOSFET DEVICES; PHONONS; POLYSILICON; SILICA;

HALFNIUM ALUMINATE; HIGH-K DIELECTRIC;

HAFNIUM COMPOUNDS;

EID: 31544477405     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7750     Document Type: Article

References (27)

1. S. Saito, Y. Shimaraoto, K. Torii, Y. Manabe, M. Cayraax, J. W. Maes, M. Hiratani and S. Kimura: Ext. Abstr. Int. Conf. Solid State Devices and Materials, 2002 (Business Center for Academic Societies Japan, Tokyo, 2002) p. 704.
2. M. V. Fischetti, D. A. Neumayer and E. A. Cartier: J. Appl. Phys. 90 (2001) 4587.
3. S. Saito, K. Torii, Y. Shimamoto, S. Tsujikawa, H. Hamamura, O. Tonomura, T. Mine, D. Hisamoto, T. Onai, J. Yugami, M. Hiratani and S. Kimura: Appl. Phys. Lett. 84 (2004) 1395.
4. F. Gámiz and J. B. Roldán: J. Appl. Phys. 94 (2003) 392.
5. S. Saito, Y. Matsui, K. Torii, Y. Shimamoto, M. Hiratani and S. Kimura: Jpn. J. Appl. Phys. 42 (2003) L1425.
6. Z. Ren, M. V. Fischetti, E. P. Gusev, E. A. Cartier and M. Chudzik: IEDM Tech. Dig., 2003, p. 793.
7. W. J. Zhu and T. P. Ma: IEEE Electron Device Lett. 25 (2004) 89.
8. S. Saito, K. Torii, M. Hiratani and T. Onai: Appl. Phys. Lett. 81 (2002) 2391.
9. J. Li and T.-P. Ma: J. Appl. Phys. 62 (1987) 4212.
10. N. Yasuda, H. Hisamatsu, H. Ota, K. Iwatnoto, K. Tominaga, K. Yamamoto, W. Mizubayashi, N. Yamagishi, M. Ohno, S. Migita, Y. Morita, T. Horikawa, T. Nabatame and A. Toriumi: Ext. Abstr. Int. Conf. Solid State Devices and Materials, 2003 (Business Center for Academic Societies Japan, Tokyo, 2003) p. 50.
11. S. Takagi, A. Toriumi, M. Iwase and H. Tango: IEEE Trans. Electron Devices 41 (1994) 2357.
12. A. Pirovano, Al. L. Lacaita, G. Zandler and R. Oberhuber: IEEE Trans. Electron Devices 47 (2000) 718.
13. T. Nabatame, K. Iwamoto, H. Ota, K. Tominaga, H. Hisamatsu, T. Yasuda, K. Yamamoto, W. Mizubayashi, Y. Morita, N. Yasuda, M. Ohno, T. Horikawa and A. Toriumi; Symp. VLSI Technology Dig. Pap., 2003, p. 25.
14. S. Takagi and M. Takayanagi: Jpn. J. Appl. Phys. 41 (2002) 2348.
15. -3, as shown in ref. 11.
16. F. Stern and W. E. Howard: Phys. Rev. 163 (1967) 816.
17. N. Yang, W. K. Henson, J. R. Hauser and J. J. Wortman: IEEE Trans. Electron Devices 47 (2000) 440.
18. M. V. Fischetti and S. E. Laux: J. Appl. Phys. 89 (2001) 1205.
19. C. C. Hobbs, L. R. C. Fonseca, A. Knizhnik, V. Dhandapani, S. B. Samavedam, W. J. Taylor, J. M. Grant, L. G. Dip, D. H. Triyoso, R. I. Hegde, D. C. Gilmer, R. Garcia, D. Roan, M. L. Lovejoy, R. S. Rai, E. A. Hebert, H.-H. Tseng, S. G. H. Anderson, B. E. White and P. J. Tobin: IEEE Trans. Electron Devices 51 (2004) 971.
20. x interface,
21. (b) The depletion field from the Si substrate is negligible relative to the electric field due to the Fermi-level pinning charges,
22. -3.
23. D. K. Ferry: Semiconductors (Macmillan, New York, 1991) p. 221.
24. D. K. Ferry: Semiconductors (Macmillan, New York, 1991) p. 212.
25. J. Koga, S. Takagi and A. Toriumi: Ext. Abstr. Int. Conf. Solid State Devices and Materials, 1994 (Business Center for Academic Societies Japan, Tokyo, 1994) p. 895.
26. J. Koga, S. Takagi and A. Toriumi: IEDM Tech. Dig., 1994, p. 475.
27. G. Groeseneken, H. Maes, N. Beltran and R. De Keersmaecker: IEEE Trans. Electron Devices 31 (1984) 42.