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Volumn , Issue , 2006, Pages

Effect of fluorine incorporation on 1/f Noise of HfSiON FETs for future mixed-signal CMOS

Author keywords

[No Author keywords available]

Indexed keywords

1 / F NOISE; CONDUCTION BANDS; FLUORINE INCORPORATION; INTERFACE TRAPPING; MIXED SIGNALS; NOISE PERFORMANCES;

EID: 46049105367     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346761     Document Type: Conference Paper
Times cited : (12)

References (9)
  • 1
    • 0141649587 scopus 로고    scopus 로고
    • Fermi Level Pinning at the PolySi /Metal Oxide Interface
    • C. Hobbs et al., "Fermi Level Pinning at the PolySi /Metal Oxide Interface," VLSI Tech. Symp., p.9, 2003.
    • (2003) VLSI Tech. Symp , pp. 9
    • Hobbs, C.1
  • 2
    • 33745153797 scopus 로고    scopus 로고
    • HfSiON Gate Dielectrics Design for Mixed Signal CMOS
    • K. Kojima et al., "HfSiON Gate Dielectrics Design for Mixed Signal CMOS," VLSI Tech. Symp., p.58, 2005.
    • (2005) VLSI Tech. Symp , pp. 58
    • Kojima, K.1
  • 3
    • 37249093083 scopus 로고    scopus 로고
    • Impact of HfSiON Induced Flicker Noise on Scaling of Future Mixed-Signal CMOS
    • Y. Yasuda et al., "Impact of HfSiON Induced Flicker Noise on Scaling of Future Mixed-Signal CMOS," VLSI Tech. Symp., p. 130, 2006.
    • (2006) VLSI Tech. Symp , pp. 130
    • Yasuda, Y.1
  • 4
    • 33744762543 scopus 로고    scopus 로고
    • Fluorine Incorporation into HfSiON Dielectric for Vth Control and Its Impact on Reliability for Poly-Si Gate pFET
    • M. Inoue et al., "Fluorine Incorporation into HfSiON Dielectric for Vth Control and Its Impact on Reliability for Poly-Si Gate pFET," IEDM Tech. Dig., p.425, 2005.
    • (2005) IEDM Tech. Dig , pp. 425
    • Inoue, M.1
  • 5
    • 34547323934 scopus 로고    scopus 로고
    • Vth-tunable CMIS Platform with High-k gate Dielectrics and Variability Effect for 45nm node
    • T. Hayashi et al., "Vth-tunable CMIS Platform with High-k gate Dielectrics and Variability Effect for 45nm node," IEDM Tech. Dig., p.927, 2005.
    • (2005) IEDM Tech. Dig , pp. 927
    • Hayashi, T.1
  • 6
    • 0242332720 scopus 로고    scopus 로고
    • Improvement of Charge-to-Breakdown Distribution by Fluorine Incorporation into Thin Gate Oxides
    • Y. Mitani et al., "Improvement of Charge-to-Breakdown Distribution by Fluorine Incorporation into Thin Gate Oxides," IEEE Trans. on Electron Devices, vol.50, p.2221, 2003.
    • (2003) IEEE Trans. on Electron Devices , vol.50 , pp. 2221
    • Mitani, Y.1
  • 7
    • 33744484760 scopus 로고    scopus 로고
    • Efficacy of Fluorine Doping at Various Stages on Noise Reduction
    • M. M. Nelson et al., "Efficacy of Fluorine Doping at Various Stages on Noise Reduction," IEEE WMED '05, p. 17, 2005.
    • (2005) IEEE WMED '05 , pp. 17
    • Nelson, M.M.1
  • 8
    • 33846133958 scopus 로고    scopus 로고
    • 2) Reliability by Incorporation of Fluorine
    • 2) Reliability by Incorporation of Fluorine," IEDM Tech. Dig., p.429, 2005.
    • (2005) IEDM Tech. Dig , pp. 429
    • Seo, K.1
  • 9
    • 0025398785 scopus 로고
    • A Unified Model for the Flicker Noise in Metal-Oxide-Semiconductor Field-Effect Transistors
    • Kwok K. Hong et al., "A Unified Model for the Flicker Noise in Metal-Oxide-Semiconductor Field-Effect Transistors," IEEE Trans. on Electron Devices, vol.37, p.654, 1990.
    • (1990) IEEE Trans. on Electron Devices , vol.37 , pp. 654
    • Hong, K.K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.