|
Volumn , Issue , 2006, Pages
|
Effect of fluorine incorporation on 1/f Noise of HfSiON FETs for future mixed-signal CMOS
|
Author keywords
[No Author keywords available]
|
Indexed keywords
1 / F NOISE;
CONDUCTION BANDS;
FLUORINE INCORPORATION;
INTERFACE TRAPPING;
MIXED SIGNALS;
NOISE PERFORMANCES;
ELECTRIC CONDUCTIVITY;
ELECTRON DEVICES;
ELECTRON MOBILITY;
FIELD EFFECT TRANSISTORS;
FLUORINE;
HAFNIUM;
MESFET DEVICES;
HAFNIUM COMPOUNDS;
|
EID: 46049105367
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2006.346761 Document Type: Conference Paper |
Times cited : (12)
|
References (9)
|