Carrier mobility in MOSFETs fabricated with Hf-Si-O-N gate dielectric, polysilicon gate electrode, and self-aligned source and drain

IEEE Electron Device Letters

Volumn 23, Issue 10, 2002, Pages 603-605

  Rotondaro, A L P ^a,b   Visokay, M R ^b   Shanware, A ^a,b   Chambers, J J ^b   Colombo, L ^a,b  

^a IEEE   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Electron mobility; Hafnium; Hf Si O N; Hf SiOn; High k gate dielectric; Hole mobility; Interface engineering; Polysilicon gate electrode; Self aligned source and drain

Indexed keywords

EQUIVALENT OXIDE THICKNESS; GATE DIELECTRIC; INTERFACE ENGINEERING; POLYSILICON GATE ELECTRODES;

CARRIER MOBILITY; DIELECTRIC MATERIALS; ELECTRIC FIELD MEASUREMENT; ELECTRODES; ELECTRON MOBILITY; GATES (TRANSISTOR); HOLE MOBILITY; INTEGRATED CIRCUIT MANUFACTURE; INTERFACES (MATERIALS); POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

MOSFET DEVICES;

EID: 0036804802     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.803749     Document Type: Article

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