1/fγ drain current noise model in ultrathin oxide mosfets

Fluctuation and Noise Letters

Volumn 4, Issue 2, 2004, Pages

  Lee, Jonghwan ^a   Bosman, Gijs ^a  

^a University of Florida   (United States)

Author keywords

1 f drain current noise; Number and mobility fluctuation; Tunneling assisted thermally activated process; Ultrathin oxide MOSFETs

Indexed keywords

EID: 12144270266     PISSN: 02194775     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0219477504001902     Document Type: Article

References (20)

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