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Volumn 17, Issue 3, 2007, Pages 445-456

Semiconductor device scaling: Physics, transport, and the role of nanowires

Author keywords

Ballistic transport; Discrete impurities; Nanoelectronics; Nanowires

Indexed keywords

CMOS INTEGRATED CIRCUITS; DATA PROCESSING; NANOELECTRONICS; PHOTONICS; SEMICONDUCTOR DEVICES;

EID: 41149106492     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156407004631     Document Type: Conference Paper
Times cited : (2)

References (35)
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    • Quantum effects in MOSFETs: Use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices
    • D. K. Ferry, R. Akis, and D. Vasileska, Quantum effects in MOSFETs: Use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices, IEDM Tech. Dig. 2000, 287-290 (2000).
    • (2000) IEDM Tech. Dig. 2000 , pp. 287-290
    • Ferry, D.K.1    Akis, R.2    Vasileska, D.3
  • 14
    • 33947289930 scopus 로고    scopus 로고
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  • 18
    • 0033681260 scopus 로고    scopus 로고
    • Essential physics of transport in nanoscale MOSFETs, 2000 SISPAD
    • M. Lundstrom, Z. Ren, and S. Datta, Essential physics of transport in nanoscale MOSFETs, 2000 SISPAD Tech. Dig., 1-5 (2000).
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    • Lundstrom, M.1    Ren, Z.2    Datta, S.3
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    • R. Chau, J. Brask, S. Datta, G. Dewey, M. Doczy, B. Doyle, J. Kavalieros, B. Jin, M. Metz, A. Majumdar, and M. Radosavljevic, Emerging silicon and non-silicon nanoelectronic devices: Opportunities and challenges for future high-performance and low-power computational applications, 2005 IEEE VLSI-TSA Int. Symp. Tech. Dig., 13-16 (2005).
    • R. Chau, J. Brask, S. Datta, G. Dewey, M. Doczy, B. Doyle, J. Kavalieros, B. Jin, M. Metz, A. Majumdar, and M. Radosavljevic, Emerging silicon and non-silicon nanoelectronic devices: Opportunities and challenges for future high-performance and low-power computational applications, 2005 IEEE VLSI-TSA Int. Symp. Tech. Dig., 13-16 (2005).
  • 26


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.