A new model for including discrete dopant ions into Monte Carlo simulations

IEEE Transactions on Nanotechnology

Volumn 2, Issue 4, 2003, Pages 193-197

  Ramey, Stephen M ^a   Ferry, David K ^a  

^a Arizona State University   (United States)

Author keywords

Monte Carlo methods; MOSFETs; Quantum theory; Silicon on insulator (SOI) technology

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); ELECTRONS; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; MONTE CARLO METHODS; MOSFET DEVICES; POSITIVE IONS; SILICON; SILICON ON INSULATOR TECHNOLOGY;

EFFECTIVE POTENTIAL; MESH; QUANTUM MECHANICAL EFFECTS;

QUANTUM THEORY;

EID: 3042721863     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.820797     Document Type: Conference Paper

References (7)

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