Essential physics of carrier transport in nanoscale MOSFETs

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2000, Pages 1-5

  Lundstrom, Mark ^a   Ren, Zhibin ^a   Datta, Supriyo ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER AIDED DESIGN; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TRANSPORT PROPERTIES; INTEGRATED CIRCUIT LAYOUT; LIMITERS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS;

NANOSCALE TRANSISTORS; QUANTUM CONFINEMENT EFFECTS; TRANSPORT MODELS;

MOSFET DEVICES;

EID: 0033681260     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (21)