Heteroepitaxial evolution of AlN on GaN Grown by metal-organic chemical vapor deposition

Journal of Applied Physics

Volumn 95, Issue 5, 2004, Pages 2921-2923

  Gherasimova, M ^a   Cui, G ^a   Ren, Z ^a   Su, J ^a   Wang, X L ^a   Han, J ^a   Higashimine, K ^b   Otsuka, N ^b  

^a Yale University   (United States)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOM DIFFUSION; STRAIN RELAXATION;

CRYSTALLOGRAPHY; EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; MORPHOLOGY; NITROGEN; NUCLEATION; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM NITRIDE;

EID: 1642301460     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1644036     Document Type: Article

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