High-voltage operation with high current gain of pnp AlGaNGaN heterojunction bipolar transistors with thin n -type GaN base

Applied Physics Letters

Volumn 86, Issue 2, 2005, Pages

  Kumakura, Kazuhide ^a   Makimoto, Toshiki ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; DOPING (ADDITIVES); ELECTRON BEAMS; ELECTRON CYCLOTRON RESONANCE; GALLIUM NITRIDE; LEAKAGE CURRENTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SUPERLATTICES;

CARRIER DIFFUSION; COLLECTOR CURRENT; ELECTRON BEAM INDUCED CURRENTS (EBIC); WEBSTER EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 19744383028     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1851608     Document Type: Article

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