The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs

IEEE Transactions on Electron Devices

Volumn 51, Issue 5, 2004, Pages 785-789

  Youn, Doo Hyeb ^a   Lee, Jae Hoon ^b   Kumar, Vipan ^c   Lee, Kyu Seok ^a   Lee, Jung Hee ^d   Adesida, Ilesanmi ^c  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

^c University of Illinois at Urbana Champaign   (United States)

^d Kyungpook National University   (South Korea)

Author keywords

Field effect transistors (FET); Gallium nitride; Microwave power

Indexed keywords

ALUMINUM; CURRENT DENSITY; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SHORT CIRCUIT CURRENTS; TRANSCONDUCTANCE;

DRAIN CURRENT; ISOELECTRONIC ALUMINUM DOPING; SURFACE TRAPPING EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2442499520     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.825813     Document Type: Article

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