The effect of a slight mis-orientation angle of c-plane sapphire substrate on surface and crystal quality of MOCVD grown GaN thin films

Physica Status Solidi C: Conferences

Volumn 1, Issue 10, 2004, Pages 2483-2486

  Kim, Seong Woo ^a   Aida, Hideo ^b   Suzuki, Toshimasa ^a  

^a NIPPON INSTITUTE OF TECHNOLOGY   (Japan)

^b Adamant Namiki Precision Jewel Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE MEASUREMENT; CRYSTAL STRUCTURE; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SAPPHIRE; SUBSTRATES; SURFACES; X RAY DIFFRACTION ANALYSIS;

CRYSTAL QUALITY; MIS-ORIENTATION ANGLE; SAPPHIRE SUBSTRATES; X-RAY ROCKING CURVE (XRC);

THIN FILMS;

EID: 7044227804     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200405028     Document Type: Conference Paper

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