Copper ion drift in integrated circuits: Effect of boundary conditions on reliability and breakdown of low- k dielectrics

Journal of Applied Physics

Volumn 103, Issue 1, 2008, Pages

  Achanta, Ravi S ^a   Gill, William N ^a   Plawsky, Joel L ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; COPPER; INTEGRATED CIRCUITS; MASS TRANSFER; POISSON EQUATION; RELIABILITY ANALYSIS;

COPPER ION DRIFT; COPPER IONS;

DIELECTRIC MATERIALS;

EID: 38149084191     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2828048     Document Type: Article

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