Electrical characterization of copper penetration effects in silicon dioxide

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 431-432

  Cluzel, Jacques ^a   Mondon, François ^a,b   Blachier, Denis ^a   Morand, Yves ^a,c   Martel, Laurent ^a   Reimbold, Gilles ^a  

^a CEA LETI   (France)

^b UNIV GRENOBLE ALPES   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Contamination; Copper; Interconnects; Reliability

Indexed keywords

CAPACITANCE; COPPER; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); LEAKAGE CURRENTS; RELIABILITY;

COPPER PENETRATION EFFECTS;

MOS CAPACITORS;

EID: 0036087932     PISSN: 00999512     EISSN: None     Source Type: Journal    
DOI: 10.1109/RELPHY.2002.996681     Document Type: Article

References (9)