-
4
-
-
3142563208
-
Determination of the nature of molecular bonding in silica from time-dependent dielectric breakdown data
-
J.W. McPherson, "Determination of the nature of molecular bonding in silica from time-dependent dielectric breakdown data,"in J. Appl. Phys. 95 (2004) pp. 8101-8109
-
(2004)
J. Appl. Phys.
, vol.95
, pp. 8101-8109
-
-
McPherson, J.W.1
-
6
-
-
0038310145
-
Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics
-
IEEE
-
E. Ogawa, J. Kim, G. Haase, H. Mogul and J. McPherson, "Leakage, breakdown, and TDDB characteristics of porous low-k silica-based interconnect dielectrics," in Proceedings of the International Reliability Physics Sympos. (IEEE, 2003) pp. 166-172.
-
(2003)
Proceedings of the International Reliability Physics Sympos.
, pp. 166-172
-
-
Ogawa, E.1
Kim, J.2
Haase, G.3
Mogul, H.4
McPherson, J.5
-
8
-
-
84987266075
-
A statistical distribution function of wide applicability
-
W. Weibull, "A Statistical Distribution Function of Wide Applicability," in J. Applied Mechanics, 18 (1951) pp.293-299.
-
(1951)
J. Applied Mechanics
, vol.18
, pp. 293-299
-
-
Weibull, W.1
-
9
-
-
84947277195
-
Dielectric reliability studies of metal insulator metal capacitors (MIMCAP) with SiN dielectric under unipolar to bipolar AC-stress
-
IEEE
-
For example: R. Schwab and K.H. Allers, "Dielectric reliability studies of metal insulator metal capacitors (MIMCAP) with SiN dielectric under unipolar to bipolar AC-stress," in Proceedings of the International, Integ. Reliability Workshop (IEEE 2003) pp.86-90 ;
-
(2003)
Proceedings of the International, Integ. Reliability Workshop
, pp. 86-90
-
-
Schwab, R.1
Allers, K.H.2
-
10
-
-
2342521256
-
Time-dependent dielectric breakdown of hydrogenated silicon carbon nitride thin films under the influence of copper ions
-
H. Cui and P.A. Burke, "Time-dependent dielectric breakdown of hydrogenated silicon carbon nitride thin films under the influence of copper ions," in Appl. Phys. Lett. 84 (2004) pp. 2629-2631
-
(2004)
Appl. Phys. Lett.
, vol.84
, pp. 2629-2631
-
-
Cui, H.1
Burke, P.A.2
-
11
-
-
21544458715
-
Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
-
and references within
-
D.J. DiMaria, E. Cartier and D. Arnold," Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon," in J. Appl. Phys. 73 (1993) pp.3367-3384, and references within.
-
(1993)
J. Appl. Phys.
, vol.73
, pp. 3367-3384
-
-
DiMaria, D.J.1
Cartier, E.2
Arnold, D.3
-
12
-
-
0034430482
-
Modeling trap generation process in thin oxides
-
IEEE
-
G. Bersuker, Y. Jeon, G. Gale, J. Guan, and H.R. Huff, "Modeling trap generation process in thin oxides," in Proceedings of the Internstional Integrated Reliability Workshop (IEEE, 2000), pp. 107-111.
-
(2000)
Proceedings of the Internstional Integrated Reliability Workshop
, pp. 107-111
-
-
Bersuker, G.1
Jeon, Y.2
Gale, G.3
Guan, J.4
Huff, H.R.5
-
15
-
-
8644286764
-
Effects of dielectric liners on TDDB lifetime of a Cu/ low-k interconnect
-
IEEE
-
T.Y. Tsui, P. Matz, R. Willecke, E. Zielinski, T. Kim; G.S. Haase, J.E. McPherson, A. Singh, and A.J. McKerrow, "Effects of dielectric liners on TDDB lifetime of a Cu/ low-k interconnect," in Proceedings of the Proc. International Interconnect Technol. Conf.,(IEEE 2004) pp. 78-80.
-
(2004)
Proceedings of the Proc. International Interconnect Technol. Conf.
, pp. 78-80
-
-
Tsui, T.Y.1
Matz, P.2
Willecke, R.3
Zielinski, E.4
Kim, T.5
Haase, G.S.6
McPherson, J.E.7
Singh, A.8
McKerrow, A.J.9
-
18
-
-
21544467967
-
Trap creation in silicon dioxide produced by hot electrons
-
D.J. DiMaria and J.W. Stasiak "Trap creation in silicon dioxide produced by hot electrons," in J. Appl. Phys., 65 (1989) pp. 2342-2356.
-
(1989)
J. Appl. Phys.
, vol.65
, pp. 2342-2356
-
-
DiMaria, D.J.1
Stasiak, J.W.2
-
19
-
-
0034261329
-
First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen
-
P.E. Blöchl, "First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen," in Phys. Rev. B, 62 (2000) pp.6158-6179
-
(2000)
Phys. Rev. B
, vol.62
, pp. 6158-6179
-
-
Blöchl, P.E.1
-
20
-
-
33744905856
-
Mechanism for stress-induced leakage currents in thin silicon dioxide films
-
D.J. DiMaria and E. Cartier, "Mechanism for stress-induced leakage currents in thin silicon dioxide films," in J. Appl. Phys., 78 (1995) pp. 3883-3894
-
(1995)
J. Appl. Phys.
, vol.78
, pp. 3883-3894
-
-
DiMaria, D.J.1
Cartier, E.2
-
21
-
-
0035832964
-
Degradation kinetics of thermal oxides
-
F. Irrera, "Degradation kinetics of thermal oxides," in Appl. Phys. Lett., 79 (2001) pp. 182-184
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 182-184
-
-
Irrera, F.1
-
22
-
-
0034225126
-
Hot-electron effects and oxide degradation in MOS structures studied with ballistic electron emission microscopy
-
R. Ludeke, " Hot-electron effects and oxide degradation in MOS structures studied with ballistic electron emission microscopy," in IBM J. Res. Develop. 44 (2000) pp.517-534
-
(2000)
IBM J. Res. Develop.
, vol.44
, pp. 517-534
-
-
Ludeke, R.1
-
23
-
-
36549101452
-
Direct measurement of the energy distribution of hot electrons in silicon dioxide
-
S. D. Brorson, D. J. DiMaria, M. V. Fischetti, F. L. Pesavento, P. M. Solomon, and D. W. Dong, " Direct measurement of the energy distribution of hot electrons in silicon dioxide," in J. Appl. Phys. 58 (1985) pp. 1302-1513 ;
-
(1985)
J. Appl. Phys.
, vol.58
, pp. 1302-1513
-
-
Brorson, S.D.1
DiMaria, D.J.2
Fischetti, M.V.3
Pesavento, F.L.4
Solomon, P.M.5
Dong, D.W.6
-
24
-
-
0001529461
-
Direct observation of the threshold for electron heating in silicon dioxide
-
J. DiMaria, M. V. Fischetti, E. Tierney, and D. Brorson, "Direct observation of the threshold for electron heating in silicon dioxide," in Phys. Rev. Lett. 56 (1986) pp. 1284-1286
-
(1986)
Phys. Rev. Lett.
, vol.56
, pp. 1284-1286
-
-
DiMaria, J.1
Fischetti, M.V.2
Tierney, E.3
Brorson, D.4
-
25
-
-
0344227232
-
Electron heating studies in silicon dioxide: Low fields and thick films
-
D. J. DiMaria, M. V. Fischetti, M. Arienzo, and E. Tierney, "Electron heating studies in silicon dioxide: Low fields and thick films," in J. Appl. Phys. 60 (1986) pp. 1719-1726
-
(1986)
J. Appl. Phys.
, vol.60
, pp. 1719-1726
-
-
Dimaria, D.J.1
Fischetti, M.V.2
Arienzo, M.3
Tierney, E.4
-
26
-
-
0034683311
-
Excitons and optical properties of α-quartz
-
E. K. Chang, M. Rohlfing, and S. G. Louie, "Excitons and optical properties of α-quartz," in Phys Rev. Lett. 85 (2000) pp. 2613-2616
-
(2000)
Phys Rev. Lett.
, vol.85
, pp. 2613-2616
-
-
Chang, E.K.1
Rohlfing, M.2
Louie, S.G.3
-
27
-
-
23944435084
-
-
Eds. R.A.B. Devinem A.B. Roderick, E. Doorhee and J.P. Duraud, (John Wiley & Sons)
-
A.H. Edwards, W. B. Fowler, and J. Robertson, in Structure and Imperfection in Amorphous and Crystalline Silicon Oxide, Eds. R.A.B. Devinem A.B. Roderick, E. Doorhee and J.P. Duraud, (John Wiley & Sons, 2000), p. 254.
-
(2000)
Structure and Imperfection in Amorphous and Crystalline Silicon Oxide
, pp. 254
-
-
Edwards, A.H.1
Fowler, W.B.2
Robertson, J.3
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