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Volumn , Issue , 2005, Pages 466-473

Breakdown characteristics of interconnect dielectrics

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION PARAMETER; INTERCONNECT DIELECTRICS; LINE-TO-LINE SPACING; RAMP-RATE;

EID: 28744441002     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (60)

References (27)
  • 4
    • 3142563208 scopus 로고    scopus 로고
    • Determination of the nature of molecular bonding in silica from time-dependent dielectric breakdown data
    • J.W. McPherson, "Determination of the nature of molecular bonding in silica from time-dependent dielectric breakdown data,"in J. Appl. Phys. 95 (2004) pp. 8101-8109
    • (2004) J. Appl. Phys. , vol.95 , pp. 8101-8109
    • McPherson, J.W.1
  • 8
    • 84987266075 scopus 로고
    • A statistical distribution function of wide applicability
    • W. Weibull, "A Statistical Distribution Function of Wide Applicability," in J. Applied Mechanics, 18 (1951) pp.293-299.
    • (1951) J. Applied Mechanics , vol.18 , pp. 293-299
    • Weibull, W.1
  • 9
    • 84947277195 scopus 로고    scopus 로고
    • Dielectric reliability studies of metal insulator metal capacitors (MIMCAP) with SiN dielectric under unipolar to bipolar AC-stress
    • IEEE
    • For example: R. Schwab and K.H. Allers, "Dielectric reliability studies of metal insulator metal capacitors (MIMCAP) with SiN dielectric under unipolar to bipolar AC-stress," in Proceedings of the International, Integ. Reliability Workshop (IEEE 2003) pp.86-90 ;
    • (2003) Proceedings of the International, Integ. Reliability Workshop , pp. 86-90
    • Schwab, R.1    Allers, K.H.2
  • 10
    • 2342521256 scopus 로고    scopus 로고
    • Time-dependent dielectric breakdown of hydrogenated silicon carbon nitride thin films under the influence of copper ions
    • H. Cui and P.A. Burke, "Time-dependent dielectric breakdown of hydrogenated silicon carbon nitride thin films under the influence of copper ions," in Appl. Phys. Lett. 84 (2004) pp. 2629-2631
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 2629-2631
    • Cui, H.1    Burke, P.A.2
  • 11
    • 21544458715 scopus 로고
    • Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
    • and references within
    • D.J. DiMaria, E. Cartier and D. Arnold," Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon," in J. Appl. Phys. 73 (1993) pp.3367-3384, and references within.
    • (1993) J. Appl. Phys. , vol.73 , pp. 3367-3384
    • DiMaria, D.J.1    Cartier, E.2    Arnold, D.3
  • 14
    • 0842286058 scopus 로고    scopus 로고
    • Effects of silicon carbide composition on dielectric barrier Voltage Ramp and TDDB reliability performance
    • IEEE
    • T.Y.Tsui, R. Willecke, and A.J. McKerrow, "Effects of silicon carbide composition on dielectric barrier Voltage Ramp and TDDB reliability performance," in Proceedings of the International Interconnect Technol. Conf, (IEEE 2003) pp. 45-47.
    • (2003) Proceedings of the International Interconnect Technol. Conf , pp. 45-47
    • Tsui, T.Y.1    Willecke, R.2    McKerrow, A.J.3
  • 18
    • 21544467967 scopus 로고
    • Trap creation in silicon dioxide produced by hot electrons
    • D.J. DiMaria and J.W. Stasiak "Trap creation in silicon dioxide produced by hot electrons," in J. Appl. Phys., 65 (1989) pp. 2342-2356.
    • (1989) J. Appl. Phys. , vol.65 , pp. 2342-2356
    • DiMaria, D.J.1    Stasiak, J.W.2
  • 19
    • 0034261329 scopus 로고    scopus 로고
    • First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen
    • P.E. Blöchl, "First-principles calculations of defects in oxygen-deficient silica exposed to hydrogen," in Phys. Rev. B, 62 (2000) pp.6158-6179
    • (2000) Phys. Rev. B , vol.62 , pp. 6158-6179
    • Blöchl, P.E.1
  • 20
    • 33744905856 scopus 로고
    • Mechanism for stress-induced leakage currents in thin silicon dioxide films
    • D.J. DiMaria and E. Cartier, "Mechanism for stress-induced leakage currents in thin silicon dioxide films," in J. Appl. Phys., 78 (1995) pp. 3883-3894
    • (1995) J. Appl. Phys. , vol.78 , pp. 3883-3894
    • DiMaria, D.J.1    Cartier, E.2
  • 21
    • 0035832964 scopus 로고    scopus 로고
    • Degradation kinetics of thermal oxides
    • F. Irrera, "Degradation kinetics of thermal oxides," in Appl. Phys. Lett., 79 (2001) pp. 182-184
    • (2001) Appl. Phys. Lett. , vol.79 , pp. 182-184
    • Irrera, F.1
  • 22
    • 0034225126 scopus 로고    scopus 로고
    • Hot-electron effects and oxide degradation in MOS structures studied with ballistic electron emission microscopy
    • R. Ludeke, " Hot-electron effects and oxide degradation in MOS structures studied with ballistic electron emission microscopy," in IBM J. Res. Develop. 44 (2000) pp.517-534
    • (2000) IBM J. Res. Develop. , vol.44 , pp. 517-534
    • Ludeke, R.1
  • 24
    • 0001529461 scopus 로고
    • Direct observation of the threshold for electron heating in silicon dioxide
    • J. DiMaria, M. V. Fischetti, E. Tierney, and D. Brorson, "Direct observation of the threshold for electron heating in silicon dioxide," in Phys. Rev. Lett. 56 (1986) pp. 1284-1286
    • (1986) Phys. Rev. Lett. , vol.56 , pp. 1284-1286
    • DiMaria, J.1    Fischetti, M.V.2    Tierney, E.3    Brorson, D.4
  • 25
    • 0344227232 scopus 로고
    • Electron heating studies in silicon dioxide: Low fields and thick films
    • D. J. DiMaria, M. V. Fischetti, M. Arienzo, and E. Tierney, "Electron heating studies in silicon dioxide: Low fields and thick films," in J. Appl. Phys. 60 (1986) pp. 1719-1726
    • (1986) J. Appl. Phys. , vol.60 , pp. 1719-1726
    • Dimaria, D.J.1    Fischetti, M.V.2    Arienzo, M.3    Tierney, E.4
  • 26
    • 0034683311 scopus 로고    scopus 로고
    • Excitons and optical properties of α-quartz
    • E. K. Chang, M. Rohlfing, and S. G. Louie, "Excitons and optical properties of α-quartz," in Phys Rev. Lett. 85 (2000) pp. 2613-2616
    • (2000) Phys Rev. Lett. , vol.85 , pp. 2613-2616
    • Chang, E.K.1    Rohlfing, M.2    Louie, S.G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.