A copper drift-model for the low-κ polymer DVS-BCB

Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000

Volumn , Issue , 2000, Pages 211-213

  Hoernig, T ^b   Melzer, K ^a   Schubert, U ^a   Geisler, H ^c   Barthar, J W ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; INTEGRATED CIRCUIT INTERCONNECTS; MASS SPECTROMETRY; METAL INSULATOR BOUNDARIES; POLYMERS; SECONDARY ION MASS SPECTROMETRY;

APPLIED VOLTAGES; BENZOCYCLOBUTENE; CAPACITANCE VOLTAGE MEASUREMENTS; COPPER METALLIZATION; INTERLEVEL DIELECTRIC; LINEAR RELATIONSHIPS; METAL INSULATORS; SECONDARY ION MASS SPECTROSCOPY;

COPPER;

EID: 84962892234     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2000.854328     Document Type: Conference Paper

References (3)

1. Loke A.: Process Integration Issues of Low-Permittivity Dielectrics with Copper for High-Performance Interconnects, Ph.D.Thesis, Dep. of Electrical Engineering, Stanford University, U.S.A., March 1999, pp. 85-120
2. Semiconductor Process Development and Monitoring using CV/IV and Spreading Resistance Profiling, 1995, Solid State Measurements, Inc., U.S.A.
3. Hoernig T.: Electrical Characterization of thin Insulator Layers and Diffusion Barriers for Copper Metallization Systems in Semiconductor Devices, Diploma Thesis, Dep. of Electrical Engineering, Dresden University of Technology, F.R. of Germany, October 1999