The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics

Microelectronics Reliability

Volumn 46, Issue 9-11, 2006, Pages 1643-1647

  Lloyd, J R ^a   Murray, C E ^a   Ponoth, S ^a   Cohen, S ^a   Liniger, E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; COPPER; DIFFUSION; FAILURE ANALYSIS; MATHEMATICAL MODELS; METALLIZING;

COMB CAPACITOR STRUCTURES; CU DIFFUSION; INTERLEVEL DIELECTRICS; TDDB;

DIELECTRIC MATERIALS;

EID: 33747792683     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.08.003     Document Type: Article

References (6)

1. Lloyd J.R., Liniger E., and Chen S.T. Time dependent breakdown in a low-k interlevel dielelctric. Microelectronics Reliability 44 (2004) 1861
2. Lloyd J.R., Liniger E., and Shaw T.M. Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectric. J Appl Phys 98 (2005) 084109
3. Chen F., et al. A comprehensive study of low-k SiCOH TDDB phenomena and its reliability lifetime model development. Proc. 44h Ann IRPS San Jose CA, 46 (2006).
4. Suzumara N., et al. A new TDDB model based on Cu ion drift interconnect dielectrics. Proc. 44th Ann. IRPS San Jose CA, 484 (2006).
5. Carslaw HS, Jaeger JC. Conduction of Heat in Solids. Oxford, UK: Clarenden Press.
6. Lloyd J.R., Shaw T.M., and Liniger E. Effect of moisture on the Time Dependent Dielectric Breakdown (TDDB) behavior in an ultra-low-k (ULK) dielectric. Proc IEEE IRW (2005)