SIMS study of Cu trapping and migration in low-k dielectric films

Applied Surface Science

Volumn 231-232, Issue , 2004, Pages 791-795

  Li, Yupu ^a   Hunter, Jerry ^a   Tate, Tom J ^b  

^a Applied Materials Sunnyvale   (United States)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Copper trapping and migration; Low k dielectric film; SIMS

Indexed keywords

ACTIVATION ENERGY; CALIBRATION; COPPER; DIELECTRIC FILMS; DIFFUSION; ION BEAMS; ION IMPLANTATION; LOW TEMPERATURE EFFECTS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY;

COPPER TRAPPING; MIGRATION; OXIDE STANDARD; ROOM TEMPERATURE;

SURFACE REACTIONS;

EID: 2942567836     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.03.072     Document Type: Conference Paper

References (5)

1. Does Advanced Technology Really Matter, Intel 2002 Annual Report. http://www.intel.com .
2. J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Ranges of Ions in Solids, Pergamon Press, New York, 1985.
3. T.D. Townsend, J.C. Kelly, N.E.W. Hartley, Ion Implantation and their Applications, Academic Press, New York, 1976.
4. W. Jost, Diffusion in Solids, Liquid, Gases, Academic Press, New York, 1960.
5. H.F. Wolf (Ed.), Silicon Semiconductor Data, Pergamon Press, New York, 1969.