Cu-ion-migration phenomena and its influence on TDDB lifetime in Cu metallization

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2003, Pages 287-292

  Noguchi, Junji ^a   Miura, Noriko ^a   Kubo, Maki ^a   Tamaru, Tsuyoshi ^a   Yamaguchi, Hizuru ^a   Hamada, Naohide ^a   Makabe, Kazuya ^a   Tsuneda, Ruriko ^a   Takeda, Ken Ichi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIELECTRIC MATERIALS; IONS; METALLIZING; RELIABILITY;

ION-MIGRATION;

ELECTRIC BREAKDOWN;

EID: 0037634524     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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2. 3-plasma Treatment and CMP Modification TDDB Improvement in Cu Metallization", Electron Device, Vol. 48, No. 7, pp1340-1345 (2001).
3. J.Noguchi, T.Saito, N.Ohashi, H.Ashihara, H.Maruyama, M. Kubo, H.Yamaguchi, D.Ryuzaki, K. Takeda, and K. Hinode, "Impact of Low-K Dielectrics and Barrier Metals on TDDB Lifetime of Cu Interconnects", Proceedings of IRPS 2001, pp.355-359 (2001).
4. N.Miura, J.Noguchi, K.Oomori, T.Jimbo, H.Aoki, and T.Tamaru, "An Effective Technology Using SiCN/FSG Structures for Dual Damascene Cu Process", Proceedings of VMIC 2001, pp143-145 (2001).
5. 2 Film with k=3.9", Proceedings of IITC 2001, pp.244-246 (2001).
6. R.Tsuneta, M.Koguchi, K.Nakamura and A.Nishida, "A specimen-drift-free EDX mapping system in a STEM for observing two-dimensional profiles of low-dose elements in fine semi-conductor devices", J. of Electron Microsc. 51(3), pp.167-171 (2002).
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