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Volumn , Issue , 2006, Pages 673-674

Study of Cu migration-induced failure of inter-layer dielectric

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; INTER LAYER DIELECTRICS; ION TRAPS;

EID: 34250693584     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251318     Document Type: Conference Paper
Times cited : (4)

References (7)
  • 2
    • 0000292672 scopus 로고    scopus 로고
    • Hot hole induced breakdown of thin silicon dioxide films, pp, 3664 - 3666
    • T. Tomita, H. Utsunomiya, Y. Kamakura, and K. Taniguchi, "Hot hole induced breakdown of thin silicon dioxide films," pp, 3664 - 3666, Appl. Phys. Lett. 71 (1997).
    • (1997) Appl. Phys. Lett , vol.71
    • Tomita, T.1    Utsunomiya, H.2    Kamakura, Y.3    Taniguchi, K.4
  • 3
    • 84955259509 scopus 로고    scopus 로고
    • st IRPS 2003.
    • st IRPS 2003.
  • 4
    • 4644227617 scopus 로고
    • Diffusion of metals in silicon dioxide,
    • Ph. D. thesis, Stanford University
    • J, D, McBrayer, "Diffusion of metals in silicon dioxide," Ph. D. thesis, Stanford University (1983).
    • (1983)
    • McBrayer, J.D.1
  • 7
    • 0035362378 scopus 로고    scopus 로고
    • New Physics-Based Analytic Approach to the Thin-Oxide Breakdown Statistics, pp. 296 - 298
    • J, Suñé, "New Physics-Based Analytic Approach to the Thin-Oxide Breakdown Statistics", pp. 296 - 298, IEEE Elec. Dev. Lett. Vol 22(6) (2001).
    • (2001) IEEE Elec. Dev. Lett , vol.22 , Issue.6
    • Suñé, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.