Simulation of the copper diffusion profile in SiO2 during bias temperature stress (BTS) test

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 2 A, 2002, Pages

  Yu, Chang Jae ^a,b   Yu, Mi ^a,b   Lee, Sin Doo ^a,b  

^a Seoul National University   (South Korea)

^b Samsung SDI   (South Korea)

Author keywords

Bias temperature stress; BTS; Concentration profile; Copper; Diffusion; Driving force; Simulation; SiO2

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; COPPER; ELECTRIC FIELDS; ELECTRIC POTENTIAL; IONIZATION; PERMITTIVITY; POISSON EQUATION; SILICA; STRESS ANALYSIS; THERMAL EFFECTS;

BIAS TEMPERATURE STRESSES (BTS);

DIFFUSION IN SOLIDS;

EID: 0036478393     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l99     Document Type: Article

References (9)