Oxidation mechanism of ionic transport of copper in SiO2 dielectrics

Thin Solid Films

Volumn 467, Issue 1-2, 2004, Pages 284-293

  Willis, Brian G ^a   Lang, David V ^b  

^a University of Delaware   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

Copper; Diffusion; Silicon oxide; SIMS

Indexed keywords

AMBIENT GASES; BIAS-TEMPERATURE-STRESS (BTS) MEASUREMENTS; COPPER DIFFUSION;

ACTIVATION ENERGY; COPPER; DIFFUSION; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON SPECTROSCOPY; MOS DEVICES; OXIDATION; POISSON RATIO; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SILICA; SUBSTRATES; THERMAL EFFECTS;

DIELECTRIC MATERIALS;

EID: 4444240165     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.04.028     Document Type: Article

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