Double gate silicon on insulator transistors. A Monte Carlo study

Solid-State Electronics

Volumn 48, Issue 6, 2004, Pages 937-945

  Gamiz F ^a   Roldan J B ^a   Godoy, A ^a   Carceller, J E ^a   Cartujo, P ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; COMPUTER SIMULATION; ELECTRON MOBILITY; GATES (TRANSISTOR); MONTE CARLO METHODS; PHONONS; POISSON EQUATION; SILICON; SURFACE ROUGHNESS;

BOLTZMANN TRANSPORT EQUATION; PHONON SCATTERING; QUANTUM EFFECTS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 1442287315     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.017     Document Type: Article

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