Quantum-mechanical effects in multiple-gate MOSFETs

Journal of Computational Electronics

Volumn 6, Issue 1-3, 2007, Pages 145-148

  Godoy, A ^a   Ruiz Gallardo, A ^a   Sampedro, C ^a   Gamiz F ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

Multiple gate; Omega gate; Pi gate; Quantum effects

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; GATES (TRANSISTOR); POISSON EQUATION; QUANTUM THEORY;

MULTIPLE-GATE MOSFETS; OMEGA-GATE; QUANTUM SIMULATIONS; QUANTUM-MECHANICAL EFFECTS;

MOSFET DEVICES;

EID: 34247335328     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-006-0087-5     Document Type: Article

References (3)

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2. Ritzenthaler, R., Faynot, O., Jahan, C., Cristoloveanu, S.: Corner and coupling effects in multiple-gate FETs. In Proceedings of the Electro-Chemical Society, pp. 283-288 (2005)
3. Park, J.T., Colinge, D.P.: Multiple-gate SOI MOSFETs: device design guidelines. IEEE Trans. Elect. Dev. 49(12), 2222 (2002)