Analog performance of the nanoscale double-gate metal-oxide-semiconductor fleld-effect-translstor near the ultimate scaling limits

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 5271-5276

  Jimenez D ^a   Iniguez B ^b   Sune J ^a   Saenz J J ^c  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

^c UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICS; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; FREQUENCIES; GREEN'S FUNCTION; NANOSTRUCTURED MATERIALS; OPTIMIZATION; SCATTERING; TRANSCONDUCTANCE;

CHANNEL LENGTH-MODULATION (CLM); DRAIN-INDUCED BARRIER LOWERING (DIBL); RADIO FREQUENCY TRANSISTORS; SCALING LIMITS;

MOSFET DEVICES;

EID: 9744233646     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1778485     Document Type: Article

References (12)

1. Z. Ren, R. Venugopal, S. Datta, M. Lundstrom, D. Jovanovic, and J. Fossum, Tech. Dig. - Int. Electron Devices Meet. 715 (2000).
2. Z. Ren, R. Venugopal, S. Datta, and M. Lundstrom, Tech. Dig. - Int. Electron Devices Meet. 107 (2001).
3. http://public.itrs.net/
4. http://www.ece.purdue.edu/celab/
5. S. Datta, Superlattices Microstruct. 28, 253 (2000).
6. M. Lundstrom, IEEE Electron Device Lett. 18, 361 (1997).
7. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, Cambridge, 1998).
8. M. Lundstrom and Z. Ren, IEEE Trans. Electron Devices 49, 133 (2002).
9. S. Datta, Electronic Transport in Mesoscopic Systems (Cambridge University Press, Cambridge, 1997).
10. A. Rahman and M. S. Lundstrom, IEEE Trans. Electron Devices 49, 481 (2002).
11. K. Rim, S. Koester, M. Hargrove, J. Chu, P. M. Mooney, J. Ott, T. Kanarsky, P. Ronsheim, M. Ieong, A. Grill, H.-S. P. Wong, Symp. VLSI Tech. Dig. 59 (2001).
12. R. Brederlow, W. Weber, J. Sauerer, S. Donnay, P. Wambacq, M. A. Vertregt, IEEE Design Test Computers 18, 34 (2001).