Strained-Si on Si1-xGex MOSFET inversion layer centroid modeling

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2447-2449

  Roldan J B ^a   Gamiz F ^a   Lopez Villanueva J A ^a   Cartujo, P ^a   Godoy, A ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

Inversion layers; MOSFETs; SiGe; Simulation

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

INVERSION LAYER; QUANTUM EFFECTS;

MOSFET DEVICES;

EID: 0035471976     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954492     Document Type: Article

References (8)

1. Effects of the inversion layer centroid on MOSFET behavior
2. Dependence of the electron mobility on the longitudinal electric field in MOSFETs
3. Monte Carlo study of electron transport in inversion layers
4. Quantum effects in Si n-MOS inversion layer at high substrate concentration
5. Electron mobility enhancement in strained-Si n-type metal-oxide semiconductor field-effect transistors
6. x channel MOSFETs
7. A unified current-voltage model for long-channel nMOSFETs
8. Properties of semiconductor surface inversion layers in the electric quantum limit