Modeling of surrounding gate MOSFETs with bulk trap states

IEEE Transactions on Electron Devices

Volumn 54, Issue 1, 2007, Pages 166-169

  Cho, Hyun Jin ^a   Plummer, James D ^a  

^a Stanford University   (United States)

Author keywords

Bulk traps; Recrystallized silicon; Surrounding gate transistor

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRON TRAPS; GATES (TRANSISTOR); HOLE TRAPS; MATHEMATICAL MODELS; POISSON EQUATION; SEMICONDUCTING SILICON; THRESHOLD VOLTAGE;

BULK TRAPS; RECRYSTALLIZED SILICON; SURROUNDING GATE TRANSISTOR;

MOSFET DEVICES;

EID: 33846035214     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.887521     Document Type: Article

References (8)

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