Impact of random soft oxide breakdown on SRAM energy/delay drift

IEEE Transactions on Device and Materials Reliability

Volumn 7, Issue 4, 2007, Pages 581-591

  Wang, Hua ^b,c,d   Miranda, Miguel ^a,c   Catthoor, Francky ^a,b,c   Dehaene, Wim ^a,b  

^a IEEE

^b UNIVERSITY OF LEUVEN   (Belgium)

^c IMEC   (Belgium)

^d QIMONDA DRESDEN GMBH AND CO OHG   (Germany)

Author keywords

Oxide breakdown; Static random access memory (SRAM); Variability; Yield loss

Indexed keywords

ELECTRIC BREAKDOWN; FUNCTIONAL ANALYSIS; LOGIC DESIGN; PROBLEM SOLVING;

OXIDE BREAKDOWN; STATIC RANDOM ACCESS MEMORY (SRAM); YIELD LOSS;

RANDOM ACCESS STORAGE;

EID: 37549011322     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2007.910444     Document Type: Article

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