-
1
-
-
0032275853
-
Reliability projection for ultra-thin oxides at low voltage
-
J.H. Stathis and D.J. DiMaria, "Reliability projection for ultra-thin oxides at low voltage", IEDM Tech. Dig., pp. 167-170, 1998.
-
(1998)
IEDM Tech. Dig
, pp. 167-170
-
-
Stathis, J.H.1
Dimaria, D.J.2
-
2
-
-
0028755085
-
Quasi-breakdown of ultrathin gate oxide under high field stress
-
S.-H. Lee, B.-J. Cho, J.-C. Kim, and S-H. Choi, "Quasi-breakdown of ultrathin gate oxide under high field stress", IEDM Tech. Dig., pp. 605-608, 1994.
-
(1994)
IEDM Tech. Dig
, pp. 605-608
-
-
Lee, S.-H.1
Cho, B.-J.2
Kim, J.-C.3
Choi, S.-H.4
-
3
-
-
0032661176
-
Influence of soft breakdown on NMOSFET device characteristics
-
T. Pompl, H. Wurzer, M. Kerber, R. C. W. Wilkins, L. Eisele, "Influence of soft breakdown on NMOSFET device characteristics". Proc. 1RPS, pp. 82-87, 1999;
-
(1999)
Proc. 1RPS
, pp. 82-87
-
-
Pompl, T.1
Wurzer, H.2
Kerber, M.3
Wilkins, R.C.W.4
Eisele, L.5
-
4
-
-
0033343947
-
Oxides in 50nm devices: Thickness uniformity improves projected reliability
-
B. Weir et al., "Oxides in 50nm devices: thickness uniformity improves projected reliability", IEDM Tech. Dig., pp. 437-440, 1999.
-
(1999)
IEDM Tech. Dig
, pp. 437-440
-
-
Weir, B.1
-
5
-
-
0033280626
-
A concept of gate oxide lifetime limited by "b-mode" stress induced leakage currents in direct tunneling regime
-
K. Okada, H. Kubo, A. Ishinaga, and K. Yoneda, "A concept of gate oxide lifetime limited by "B-mode" stress induced leakage currents in direct tunneling regime," Symp. VLSI Technol. Dig., pp. 57-58, 1999.
-
(1999)
Symp. VLSI Technol. Dig
, pp. 57-58
-
-
Okada, K.1
Kubo, H.2
Ishinaga, A.3
Yoneda, K.4
-
6
-
-
0034453380
-
Impact of MOSFET oxide breakdown on digital circuit operation and reliability
-
B. Kaczer et al, "Impact of MOSFET oxide breakdown on digital circuit operation and reliability", IEDM Tech. Dig., pp. 553-556, 2000.
-
(2000)
IEDM Tech. Dig
, pp. 553-556
-
-
Kaczer, B.1
-
7
-
-
0036540085
-
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: A case study
-
B. Kaczer et al., "Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study", Microelectron. Reliab. 42, pp. 555-564, 2002.
-
(2002)
Microelectron. Reliab
, vol.42
, pp. 555-564
-
-
Kaczer, B.1
-
8
-
-
0036712470
-
The impact of gate-oxide breakdown on SRAM stability
-
R. Rodriguez et al., "The impact of gate-oxide breakdown on SRAM stability", IEEE Electron Dev. Lett. 23, pp. 559-561, 2002.
-
(2002)
IEEE Electron Dev. Lett
, vol.23
, pp. 559-561
-
-
Rodriguez, R.1
-
9
-
-
0034453425
-
The statistical distribution of percolation resistance as a probe into the mechanics of ultra-thin oxide breakdown
-
M. A. Alam, B. E. Weir, P. J. Siverroan, Y. Ma, D. Hwang, "The statistical distribution of percolation resistance as a probe into the mechanics of ultra-thin oxide breakdown", IEDM Tech. Dig., pp. 529-533, 2000;
-
(2000)
IEDM Tech. Dig
, pp. 529-533
-
-
Alam, M.A.1
Weir, B.E.2
Siverroan, P.J.3
Ma, Y.4
Hwang, D.5
-
10
-
-
0035716669
-
Understanding soft and hard breakdown statistics, prevalence ratios and energy dissipation during breakdown runaway
-
J. Suñé, E. Y. Wu, D. Jimenez, R. P. Vollertsen, and E. Miranda, "Understanding soft and hard breakdown statistics, prevalence ratios and energy dissipation during breakdown runaway", IEDM Tech. Dig., pp. 117-120, 2001.
-
(2001)
IEDM Tech. Dig
, pp. 117-120
-
-
Suñé, J.1
Wu, E.Y.2
Jimenez, D.3
Vollertsen, R.P.4
Miranda, E.5
-
11
-
-
84907697337
-
Investigation of performance improvement and gate-to-junction leakage reduction for the 90nm CMOS gate stack architecture
-
K. Henson et al, "Investigation of performance improvement and gate-to-junction leakage reduction for the 90nm CMOS gate stack architecture", Proc. ESSDERC, pp. 563-566, 2002.
-
(2002)
Proc. ESSDERC
, pp. 563-566
-
-
Henson, K.1
-
12
-
-
0008536196
-
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
-
R. Degraeve et al, "New insights in the relation between electron trap generation and the statistical properties of oxide breakdown", IEEE T. Electron Dev. 45, pp. 904-911, 1998.
-
(1998)
IEEE T. Electron Dev
, vol.45
, pp. 904-911
-
-
Degraeve, R.1
-
13
-
-
0036926527
-
Statistics of successive breakdown events for ultra-thin gale oxides
-
J. Suñé and E. Wu, "Statistics of successive breakdown events for ultra-thin gale oxides", IEDM Tech. Dig., pp. 147-150, 2002.
-
(2002)
IEDM Tech. Dig
, pp. 147-150
-
-
Suñé, J.1
Wu, E.2
-
14
-
-
0033733540
-
Field acceleration for oxide breakdown - Can an accurate anode hole injection model resolve the e vs. 1/E controversy?
-
M. A. Alam, J. Bude, and A. Ghelti, "Field acceleration for oxide breakdown - can an accurate anode hole injection model resolve the E vs. 1/E controversy?", IRPS Proc, pp. 21-26, 2000.
-
(2000)
IRPS Proc
, pp. 21-26
-
-
Alam, M.A.1
Bude, J.2
Ghelti, A.3
-
16
-
-
0034790454
-
Consistent model for short-channel nMOSFET post-hard-breakdown characteristics
-
B. Kaczer et al, "Consistent model for short-channel nMOSFET post-hard-breakdown characteristics", Symp. VLSI Technol, pp. 121-122, 2001.
-
(2001)
Symp. VLSI Technol
, pp. 121-122
-
-
Kaczer, B.1
-
17
-
-
36549080204
-
Understanding nMOSFET characteristics after soft breakdown and their dependence on the breakdown location
-
B. Kaczer, R. Degraeve, A. De Keersgieter, G. Groeseneken, and F. Crupi., "Understanding nMOSFET characteristics after soft breakdown and their dependence on the breakdown location", Proc. ESSDERC, pp. 139-142, 2002.
-
(2002)
Proc. ESSDERC
, pp. 139-142
-
-
Kaczer, B.1
Degraeve, R.2
De Keersgieter, A.3
Groeseneken, G.4
Crupi, F.5
-
18
-
-
0036923247
-
Dielectric breakdown induced epitaxy in ultrathin gate oxide -A reliability concern
-
K.L. Pey, C.H. Tung, M.K. Radhakrishnan, L.J. Tang, and W.H. Lin, "Dielectric breakdown induced epitaxy in ultrathin gate oxide -A reliability concern", IEDM Tech. Dig., pp. 163-166, 2002
-
(2002)
IEDM Tech. Dig
, pp. 163-166
-
-
Pey, K.L.1
Tung, C.H.2
Radhakrishnan, M.K.3
Tang, L.J.4
Lin, W.H.5
-
19
-
-
84975882600
-
Collapse of MOSFET current after soft breakdown and its dependence on the transistor aspect ratio W/L
-
A. Cester, S. Cimino, A. Paccagnella, G, Ghidini, G. Guegan, "Collapse of MOSFET current after soft breakdown and its dependence on the transistor aspect ratio W/L", IRPS Proc, pp. 189-195, 2003.
-
(2003)
IRPS Proc
, pp. 189-195
-
-
Cester, A.1
Cimino, S.2
Paccagnella, A.3
Ghidini, G.4
Guegan, G.5
|