Collapse of MOSFET drain current after Soft Breakdown and its dependence on the transistor aspect ratio W/L

IEEE International Reliability Physics Symposium Proceedings

Volumn 2003-January, Issue , 2003, Pages 189-195

  Cester, A ^a   Cimino, S ^a   Paccagnella, A ^a   Ghidini, G ^b   Guegan, G ^c  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

^c CEA LETI   (France)

Author keywords

MOSFET failure; MOSFET reliability; Oxide reliability; Soft Breakdown

Indexed keywords

ASPECT RATIO; DRAIN CURRENT; GATE DIELECTRICS; HEAVY IONS; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; RECONFIGURABLE HARDWARE; RELIABILITY; TRANSCONDUCTANCE;

DRAIN SATURATION CURRENT; GATE-LEAKAGE CURRENT; MOSFET FAILURE; MOSFET RELIABILITY; OXIDE RELIABILITY; SOFT BREAKDOWN; SOFT BREAKDOWN EFFECTS; TRANSCONDUCTANCE COLLAPSE;

MOSFET DEVICES;

EID: 84975882600     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2003.1197744     Document Type: Conference Paper

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