-
4
-
-
84961239206
-
A self-testing and self-repairing structure for ultra-large capacity memories
-
Oct.
-
T. Chen and G. Sunada. A Self-Testing and Self-Repairing Structure for Ultra-Large Capacity Memories. In Proc. of the Int'l Test Conference, pp. 623-631, Oct. 1992.
-
(1992)
Proc. of the Int'l Test Conference
, pp. 623-631
-
-
Chen, T.1
Sunada, G.2
-
8
-
-
0033295872
-
On the oxide thickness dependence of the time-dependent dielectric breakdown
-
June
-
S. Oussalah and F. Nebel. On the Oxide Thickness Dependence of the Time-Dependent Dielectric Breakdown. In Proc. of the IEEE Electron Devices Meeting, pp. 42-45, June 1999.
-
(1999)
Proc. of the IEEE Electron Devices Meeting
, pp. 42-45
-
-
Oussalah, S.1
Nebel, F.2
-
9
-
-
0024610924
-
A statistical model for delay-fault testing
-
Feb.
-
E. S. Park, M. R. Mercer, and T. W. Williams. A Statistical Model for Delay-Fault Testing. IEEE Design & Test of Computers, 6(l):45-55, Feb. 1989.
-
(1989)
IEEE Design & Test of Computers
, vol.6
, Issue.50
, pp. 45-55
-
-
Park, E.S.1
Mercer, M.R.2
Williams, T.W.3
-
10
-
-
0026881179
-
The total delay fault model and statistical delay fault coverage
-
June
-
E. S. Park, M. R. Mercer, and T. W. Williams. The Total Delay Fault Model and Statistical Delay Fault Coverage. IEEE Trans. on Computers, 41(6):688-698, June 1992.
-
(1992)
IEEE Trans. on Computers
, vol.41
, Issue.6
, pp. 688-698
-
-
Park, E.S.1
Mercer, M.R.2
Williams, T.W.3
-
11
-
-
0032664182
-
On n-detection test sets and variable n-detection test sets for transition faults
-
Apr.
-
I. Pomeranz and S. Reddy. On n-detection Test Sets and Variable n-detection Test Sets for Transition Faults. In Proc. of 17th IEEE VLSI Test Symp., pp. 173-180, Apr. 1999.
-
(1999)
Proc. of 17th IEEE VLSI Test Symp.
, pp. 173-180
-
-
Pomeranz, I.1
Reddy, S.2
-
12
-
-
33646946398
-
Modeling gate oxide short defects in CMOS minimum transistors
-
M. Renovell et al. Modeling Gate Oxide Short Defects in CMOS Minimum Transistors. In Proc. of the Seventh IEEE European Test Workshop, pp. 15-20, 2002.
-
(2002)
Proc. of the Seventh IEEE European Test Workshop
, pp. 15-20
-
-
Renovell, M.1
-
13
-
-
84954445098
-
Delay testing of MOS transistor with gate oxide short
-
M. Renovell et al. Delay Testing of MOS Transistor with Gate Oxide Short. In Proc. of the 12th Asian Test Symposium, pp. 168-173, 2003.
-
(2003)
Proc. of the 12th Asian Test Symposium
, pp. 168-173
-
-
Renovell, M.1
-
15
-
-
0038732515
-
A model for gate oxide breakdown in CMOS inverters
-
Feb.
-
R. Rodriguez, J. H. Stathis, and B. P. Linder. A Model for Gate Oxide Breakdown in CMOS Inverters. IEEE Electron Device Letters, 24(2): 114-116, Feb. 2003.
-
(2003)
IEEE Electron Device Letters
, vol.24
, Issue.2
, pp. 114-116
-
-
Rodriguez, R.1
Stathis, J.H.2
Linder, B.P.3
-
17
-
-
0036444572
-
Scan-based transition fault testing - Implementation and low cost test challenges
-
Oct.
-
J. Saxena et al. Scan-Based Transition Fault Testing - Implementation and Low Cost Test Challenges. In Proc. of the Int'l Test Conference, pp. 1120-1129, Oct. 2002.
-
(2002)
Proc. of the Int'l Test Conference
, pp. 1120-1129
-
-
Saxena, J.1
-
18
-
-
0029489006
-
A detailed analysis of GOS defects in MOS transistors: Testing implications at circuit level
-
J. Segura et al. A Detailed Analysis of GOS Defects in MOS Transistors: Testing Implications at Circuit Level. In Proc. of the Int'l Test Conference, 1995.
-
(1995)
Proc. of the Int'l Test Conference
-
-
Segura, J.1
-
19
-
-
0026293032
-
Analysis and modeling of MOS devices with gate oxide short failures
-
J. Segura et al. Analysis and Modeling of MOS Devices with Gate Oxide Short Failures. In Proc. of the Int'l Symp. on Circuits and Systems, pp. 2164-2167, 1991.
-
(1991)
Proc. of the Int'l Symp. on Circuits and Systems
, pp. 2164-2167
-
-
Segura, J.1
-
21
-
-
0038529280
-
Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits
-
Mar.
-
J. Stathis. Physical and Predictive Models of Ultrathin Oxide Reliability in CMOS Devices and Circuits. IEEE Trans. on Device and Materials Reliability, 1(1):43-59, Mar. 2001.
-
(2001)
IEEE Trans. on Device and Materials Reliability
, vol.1
, Issue.1
, pp. 43-59
-
-
Stathis, J.1
-
22
-
-
0030150128
-
Modeling and characterization of electromigration failures under bidirectional current stress
-
May
-
J. Tao et al. Modeling and Characterization of Electromigration Failures Under Bidirectional Current Stress. IEEE Trans. on Electron Devices, 43(5):800-808, May 1996.
-
(1996)
IEEE Trans. on Electron Devices
, vol.43
, Issue.5
, pp. 800-808
-
-
Tao, J.1
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