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Volumn I, Issue , 2005, Pages 300-305

Circuit-level modeling for concurrent testing of operational defects due to gate oxide breakdown

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE FAILURES; OXIDE BREAKDOWN (OBD); PATTERN GENERATORS; TEST PATTERNS;

EID: 33646899067     PISSN: 15301591     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DATE.2005.94     Document Type: Conference Paper
Times cited : (16)

References (23)
  • 4
    • 84961239206 scopus 로고
    • A self-testing and self-repairing structure for ultra-large capacity memories
    • Oct.
    • T. Chen and G. Sunada. A Self-Testing and Self-Repairing Structure for Ultra-Large Capacity Memories. In Proc. of the Int'l Test Conference, pp. 623-631, Oct. 1992.
    • (1992) Proc. of the Int'l Test Conference , pp. 623-631
    • Chen, T.1    Sunada, G.2
  • 8
    • 0033295872 scopus 로고    scopus 로고
    • On the oxide thickness dependence of the time-dependent dielectric breakdown
    • June
    • S. Oussalah and F. Nebel. On the Oxide Thickness Dependence of the Time-Dependent Dielectric Breakdown. In Proc. of the IEEE Electron Devices Meeting, pp. 42-45, June 1999.
    • (1999) Proc. of the IEEE Electron Devices Meeting , pp. 42-45
    • Oussalah, S.1    Nebel, F.2
  • 10
    • 0026881179 scopus 로고
    • The total delay fault model and statistical delay fault coverage
    • June
    • E. S. Park, M. R. Mercer, and T. W. Williams. The Total Delay Fault Model and Statistical Delay Fault Coverage. IEEE Trans. on Computers, 41(6):688-698, June 1992.
    • (1992) IEEE Trans. on Computers , vol.41 , Issue.6 , pp. 688-698
    • Park, E.S.1    Mercer, M.R.2    Williams, T.W.3
  • 11
    • 0032664182 scopus 로고    scopus 로고
    • On n-detection test sets and variable n-detection test sets for transition faults
    • Apr.
    • I. Pomeranz and S. Reddy. On n-detection Test Sets and Variable n-detection Test Sets for Transition Faults. In Proc. of 17th IEEE VLSI Test Symp., pp. 173-180, Apr. 1999.
    • (1999) Proc. of 17th IEEE VLSI Test Symp. , pp. 173-180
    • Pomeranz, I.1    Reddy, S.2
  • 12
    • 33646946398 scopus 로고    scopus 로고
    • Modeling gate oxide short defects in CMOS minimum transistors
    • M. Renovell et al. Modeling Gate Oxide Short Defects in CMOS Minimum Transistors. In Proc. of the Seventh IEEE European Test Workshop, pp. 15-20, 2002.
    • (2002) Proc. of the Seventh IEEE European Test Workshop , pp. 15-20
    • Renovell, M.1
  • 13
    • 84954445098 scopus 로고    scopus 로고
    • Delay testing of MOS transistor with gate oxide short
    • M. Renovell et al. Delay Testing of MOS Transistor with Gate Oxide Short. In Proc. of the 12th Asian Test Symposium, pp. 168-173, 2003.
    • (2003) Proc. of the 12th Asian Test Symposium , pp. 168-173
    • Renovell, M.1
  • 15
  • 17
    • 0036444572 scopus 로고    scopus 로고
    • Scan-based transition fault testing - Implementation and low cost test challenges
    • Oct.
    • J. Saxena et al. Scan-Based Transition Fault Testing - Implementation and Low Cost Test Challenges. In Proc. of the Int'l Test Conference, pp. 1120-1129, Oct. 2002.
    • (2002) Proc. of the Int'l Test Conference , pp. 1120-1129
    • Saxena, J.1
  • 18
    • 0029489006 scopus 로고
    • A detailed analysis of GOS defects in MOS transistors: Testing implications at circuit level
    • J. Segura et al. A Detailed Analysis of GOS Defects in MOS Transistors: Testing Implications at Circuit Level. In Proc. of the Int'l Test Conference, 1995.
    • (1995) Proc. of the Int'l Test Conference
    • Segura, J.1
  • 19
    • 0026293032 scopus 로고
    • Analysis and modeling of MOS devices with gate oxide short failures
    • J. Segura et al. Analysis and Modeling of MOS Devices with Gate Oxide Short Failures. In Proc. of the Int'l Symp. on Circuits and Systems, pp. 2164-2167, 1991.
    • (1991) Proc. of the Int'l Symp. on Circuits and Systems , pp. 2164-2167
    • Segura, J.1
  • 21
    • 0038529280 scopus 로고    scopus 로고
    • Physical and predictive models of ultrathin oxide reliability in CMOS devices and circuits
    • Mar.
    • J. Stathis. Physical and Predictive Models of Ultrathin Oxide Reliability in CMOS Devices and Circuits. IEEE Trans. on Device and Materials Reliability, 1(1):43-59, Mar. 2001.
    • (2001) IEEE Trans. on Device and Materials Reliability , vol.1 , Issue.1 , pp. 43-59
    • Stathis, J.1
  • 22
    • 0030150128 scopus 로고    scopus 로고
    • Modeling and characterization of electromigration failures under bidirectional current stress
    • May
    • J. Tao et al. Modeling and Characterization of Electromigration Failures Under Bidirectional Current Stress. IEEE Trans. on Electron Devices, 43(5):800-808, May 1996.
    • (1996) IEEE Trans. on Electron Devices , vol.43 , Issue.5 , pp. 800-808
    • Tao, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.