Focused electron beam induced deposition of nickel

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 2228-2232

  Perentes, A ^a   Sinicco, G ^a   Boero, G ^a   Dwir, B ^a   Hoffmann, P ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC CONDUCTIVITY; FOCUSED ION BEAMS; MOLECULAR OXYGEN; NICKEL COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS CLADDING; INSULATING PARTICLES; MAGNETIC HETEROGENEOUS ALLOYS; NANOCRYSTALLINE STRUCTURE;

ELECTRON BEAMS;

EID: 37149053199     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2794071     Document Type: Article

References (29)

1. J. D. Barry, M. Ervin, J. Molstad, A. Wickenden, T. Brintlinger, P. Hoffman, and J. Meingailis, J. Vac. Sci. Technol. B 24, 3165 (2006).
2. I. Utke, P. Hoffmann, B. Dwir, K. Leifer, E. Kapon, and P. Doppelt, J. Vac. Sci. Technol. B 18, 3168 (2000).
3. I. Utke, V. Friedli, J. Michler, T. Bret, X. Multone, and P. Hoffmann, Appl. Phys. Lett. 88, 031906 (2006).
4. M. Ishida, J. Fujita, and Y. Ochiai, J. Vac. Sci. Technol. B 20, 2784 (2002).
5. A. Perentes, A. Bachmann, M. Leutenegger, I. Utke, C. Sandu, and P. Hoffmann, Microelectron. Eng. 73-74, 412 (2004).
6. A. Perentes, T. Bret, I. Utke, P. Hoffmann, and M. Vaupel, J. Vac. Sci. Technol. B 24, 587 (2006).
7. A. Perentes and P. Hoffmann, Chem. Vap. Deposition 13, 176 (2007).
8. A. Perentes, P. Hoffmann, and F. Munnik, Proc. SPIE 6533, 65331Q (2007).
9. A. Folch, J. Tejada, C. H. Peters, and M. S. Wrighton, Appl. Phys. Lett. 66, 2080 (1995).
10. K. Mølhave, D. N. Madsen, S. Dohn, and P. Bøggild, Nanotechnology 15, 1047 (2004).
11. K. Molhave, D. N. Madsen, A. M. Rasmussen, A. Carlsson, C. C. Appel, M. Brorson, C. J. H. Jacobsen, and P. Boggild, Nano Lett. 3, 1499 (2003).
12. K. Nakano, T. Horie, and H. Sakamoto, Jpn. J. Appl. Phys., Part 1 35, 6570 (1996).
13. K. Kobashi, S. Miyauchi, K. Miyata, K. Nishimura, and J. J. Rocca, J. Mater. Res. 11, 2744 (1996).
14. J. Taniguchi, I. Miyamoto, N. Ohno, K. Kantani, M. Komuro, and H. Hiroshima, Jpn. J. Appl. Phys., Part 1 36, 7691 (1997).
15. G. Boero, Appl. Phys. Lett. 86, 042503 (2005).
16. M. Ishikawa, T. Kada, H. Machida, Y. Ohshita, and A. Ogura, Jpn. J. Appl. Phys., Part 1 43, 1833 (2004).
17. G. Wilkinson, J. Am. Chem. Soc. 73, 5501 (1951).
18. A. Perentes and P. Hoffmann, J. Vac. Sci. Technol. B 25, 2233 (2007).
19. H. Kumagai, M. Matsumoto, K. Toyoda, and M. Obara, J. Mater. Sci. Lett. 15, 1081 (1996).
20. M. J. Rand, J. Electrochem. Soc. 120, 686 (1973).
21. I. Hotovy, J. Huran, L. Spiess, S. Hascik, and V. Rehacek, Sens. Actuators B 57, 147 (1999).
22. H. Sato, T. Minami, S. Takata, and T. Yamada, Thin Solid Films 236, 27 (1993).
23. S. Wang, Y. M. Sun, Q. Wang, and J. M. White, J. Vac. Sci. Technol. B 22, 1803 (2004).
24. T. Kruck, Angew. Chem., Int. Ed. Engl. 6, 53 (1967).
25. I. Utke, T. Bret, D. Laub, P. A. Buffat, L. Scandella, and P. Hoffmann, Microelectron. Eng. 73-74, 553 (2004).
26. L. Rotkina, J. F. Lin, and J. P. Bird, Appl. Phys. Lett. 83, 4426 (2003).
27. M. A. Bruk, E. N. Zhikharev, E. I. Grigoriev, A. V. Spirin, V. A. Kalnov, and I. E. Kardash, Proc. SPIE 5401, 305 (2004).
28. H. Fujimori, S. Mitani, S. Ohnuma, T. Ikeda, T. Shima, and T. Masumoto, Mater. Sci. Eng., A 182, 897 (1994).
29. S. Mitani, H. Fujimori, S. Furukawa, and S. Ohnuma, J. Magn. Magn. Mater. 140, 429 (1995).