Oxygen assisted focused electron beam induced deposition of Si-containing materials: Growth dynamics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 2233-2238

  Perentes, A ^a   Hoffmann, P ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEPOSITION; FOCUSED ION BEAMS; OXIDATION; PARAMETER ESTIMATION; SILICON;

FOCUSED ELECTRON BEAM INDUCED DEPOSITION (FEBID); GROWTH DYNAMICS; PRECURSOR REACTIVITY; SECONDARY ELECTRONS;

ELECTRON BEAMS;

EID: 37149030621     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2798746     Document Type: Article

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